Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges
نویسندگان
چکیده
In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stack-graded channel double gate-Junctionless (TMGS-GCDG-JL) strained-Si (s-Si) MOSFET with fixed charge density is analyzed the help Sentaurus TCAD. By varying various device parameters, analog/RF performance proposed TMGS-GCDG-JL s-Si evaluated in terms transconductance-generation-factor (TGF), early voltage, voltage gain, unity-power-gain (fmax), unity-current-gain (ft), and gain-transconductance product (GTFP). The results confirm that has superior compared to gate-junctionless (GS-GCDG-JL) device. However, less transconductance output conductance when GS-GCDG-JL above threshold region, reverse trend follows sub-threshold region.
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ژورنال
عنوان ژورنال: Silicon
سال: 2021
ISSN: ['1876-9918', '1876-990X']
DOI: https://doi.org/10.1007/s12633-021-01462-0